features l si photodiode coupled to low cost csi scintillator l ideal for detection of x-ray energy below 100 kev applications l x-ray detection l x-ray monitors photodiode si photodiode detector for x-ray monitor S8559 absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max.5 v operating temperature topr -10 to +60 c storage temperature tstg -20 to +70 c electrical and optical characteristics (without scintillator, ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 190 to 1000 - nm peak sensitivity wavelength p 720 - nm photo sensitivity s =500 nm -0.26-a/w dark current i d v r =10 mv - 2 50 pa terminal capacitance ct v r =0 v, f=10 khz - 950 - pf x-ray sensitivity (reference value, tube current: 1.0 ma, aluminum filter: t=6 mm, distance=830 nm) x-ray tube voltage typ. unit 120 kv 52 na note) depends on equipment and measurement conditions. avoid storing or using S8559 at high humidity because csi scintillator has deliquescence. handling precautions 1
si photodiode S8559 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2004 hamamatsu photonics k.k. cat. no. kspd1051e02 jan. 2004 dn 10.1 ?0.1 csi (ti) 8.9 8.9 ?0.1 csi (ti) 7.9 2.0 ?0.1 (10.5) 2.85 t=3.0 4.85 0.3 9.2 ?0.3 7.4 ?0.2 8.0 ?0.3 anode terminal mark 0.5 lead photosensitive surface terminal capacitance vs. reverse voltage dark current vs. reverse voltage dimensional outline (unit: mm) 100 fa 1 pa 10 pa 100 pa 1 na 0.01 0.1 1 10 reverse voltage (v) dark current (typ. ta=25 ?c) kspdb0152ea kspdb0153ea 0.1 reverse voltage (v) terminal capacitance 100 pf 10 nf 1 nf 100 nf 110 (typ. ta=25 ? c) kspda0145ea 2
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